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Growth of ZnSe single crystal by CVT method with self-moving convection shield
Institution:1. Université Grenoble-Alpes, CNRS, LMGP, F-38000 Grenoble, France;2. IMCN/NAPS, Université Catholique de Louvain, 2 Chemin du Cyclotron, 1348 Louvain-la-Neuve, Belgium;3. Université Grenoble-Alpes, CNRS, SIMAP, F-38000 Grenoble, France
Abstract:The self-moving convection shield was used in the growth of ZnSe single crystal by chemical vapor transport method using iodine as a transport agent. The reduction of the convection enables the growth of a 1-in diameter ZnSe single crystal. The incorporation efficiency of iodine on (1 1 1)B facet was proved to be larger than that on (1 0 0) facet. Impurity-hardening effect of incorporated iodine in the grown ZnSe crystal is also suggested.
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