Synthesis and growth of PbTe crystals at low temperature and their characterization |
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| Institution: | 1. Laboratoire de Physique des Solides de Bellevue, CNRS, 1 Place Aristide Briand, F-92195 Meudon Cedex, France;2. Laboratoire de Physique des Solides, INSA, F-35043 Rennes Cedex, France;3. Laboratoire de Physique des Milieux Condenses, CNRS, URA 782, Université Pierre et Marie Curie, B 77, 4, Place Jussieu, F-75252 Paris, France;1. Yangtze Normal University, Chongqing 408100, China;2. Sichuan Research Center of New Materials, Chengdu 610200, China;3. Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China;1. Institute for Frontier Materials, Deakin University, Geelong, VIC 3217, Australia;2. Research Institute for Energy Conservation, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;1. Crystal Growth Centre, Anna University, Chennai 600 025, India;2. Manonmaniam Sundaranar University, Tirunelveli 627 012, India;1. School of Energy and Environment Science, Yunnan Normal University, Kunming, 650500, China;2. Photoelectric Engineering College, Yunnan Open University, Kunming, 650092, China;1. Department of Neurosurgery, Johns Hopkins University, Baltimore, MD, USA;2. Department of Neurosurgery, Korea University Guro Hospital, Seoul, Republic of Korea;3. Boehringer Ingelheim, Ridgefield, CT, USA;1. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;2. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;3. Research Institute of Nuclear Engineering, University of Fukui, 1-2-4 Kanawa-cho, Tsuruga, Fukui 914-0055, Japan |
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| Abstract: | Lead telluride crystals have been grown for the first time by the cold traveling heater method. The structural properties of the crystals have been studied by neutron diffraction, and rocking-curves with a full-width at half-maximum of about 36 arcsec have been measured, indicating a very weak mosaicity. The lattice parameter of the crystals has been found to be ～0.64618±0.00004 nm by X-ray diffraction. Vickers microhardness in the range 25–30 kg/mm2 have been measured, depending on the charge applied to the crystals. The electronic properties of the crystals, either as-grown or annealed, have been measured and demonstrate their very high purity level, as expected from the low-temperature growth and purification process by traveling heater method. Finally, the potentialities of PbTe as a substrate for the growth of HgCdTe layers are discussed in the light of all the results reported. |
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