Controllable synthesis of novel In2O3 nanostructures and their field emission properties

Three kinds of novel indium oxide (In₂O₃) nanostructures, namely, nanorods, nanoflowers and nanowhiskers were synthesized on silicon substrate via a simple vapor‐phase transport method under atmospheric pressure. The In₂O₃nanostructures were characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), and energy‐dispersive X‐ray spectrometer (EDS) spectrum. The Raman spectra of these nanostructures showed four sharp scattering peaks centered at 308, 365, 522, and 628 cm^‐1, whose position and intensity were characteristic of standard Raman spectra for In₂O₃. The Room‐temperature photoluminescence (PL) spectra showed visible emissions centered around 576, 592, and 624 nm. Field emission measurements demonstrated that the nanoflowers possessed the best performance with a turn‐on field of 3.54 V/µm and a threshold field of 9.83 V/µm. And the field enhancement factors of these nanostructures are high enough for the application of field emission display devices. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)