Photoluminescence and radiation damage in W,Mg, Ca doped Bi4Ge3O12 crystals |
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Authors: | Pingsheng Yu Liangbi Su Huili Tang Hengyu Zhao Xin Guo Qiuhong Yang Jun Xu |
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Abstract: | Spectral properties and radiation damage in W, Mg and Ca doped Bi4Ge3O12 (W:BGO, Mg:BGO, Ca:BGO) crystals before and after thermal treatment and gamma‐ray (γ‐) or ultraviolet (UV) radiation were studied. The absorption and the photoluminescence (PL) spectra of doped BGO crystals in visible region were measured. Before γ or UV radiation, the emission intensity of W:BGO crystal is stronger than that of pure BGO at about 500 nm. After γ radiation (10k Gy), the emission intensities of doped BGO are all weaker than pure BGO under identically condition. However, the emission intensity of W:BGO is stronger than that of pure BGO after UV exposure (10k Gy). Thermal treated (annealed in N2 at 550 °C for 6 h) W:BGO has shown a much stronger emission intensity than others. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Keywords: | photoluminescence doping Bi4Ge3O12 gamma radiation ultraviolet radiation |
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