Beryllium doping and silicon amphotericity in (1 1 0) GaAs-based heterostructures: structural and optical properties |
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| Affiliation: | 1. Laboratory for Optics and Quantum Electronics, University of Virginia, Charlottesville, VA 22903-2442, USA;2. Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903-2442, USA;1. Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’Environnement, Faculté des Sciences de Gabès, Université de Gabès, Cité Erriadh, 6079, Gabès, Tunisia;2. Unité de Recherche Matériaux Avancés et Nanotechnologie, ISSAT Kasserine, Université de Kairouan, Kairouan, 3100, Tunisia;1. Dipartimento di Fisica e Astronomia, Università di Padova and CNR-IMM, Via Marzolo 8, 35131 Padova, Italy;2. INFN Laboratori Nazionali di Legnaro, Italy;1. School of Chemistry and Physics, University of KwaZulu-Natal, P Bag X01 Scottsville, 3209 Pietermaritzburg, South Africa;2. Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria;1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure and CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR China;2. University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, PR China;3. Beijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, 202 Chengfu Road, Beijing 100871, PR China;1. School of Nuclear Science and Technology, Lanzhou University, 730000, China;2. Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, 730000, China |
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| Abstract: | The use of beryllium as an acceptor at high doping levels in (1 1 0)GaAs-based heterostructures is found to be deleterious to the structural and optical properties of these epi-layers. This may limit the use of beryllium as a p-type dopant on the (1 1 0) surface. Because silicon is amphoteric on the (1 1 0), it can be used as an alternative p-type dopant, in addition to its traditional role as an n-type dopant. Transmission electron microscopy, optical absorption, and luminescence data indicate that high quality multiple quantum well structures with p-type GaAs buffer layers doped with silicon, rather than beryllium, can be grown. |
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