Quantum cascade electroluminescence in GaAs/AlGaAs structures |
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Authors: | P. Kruck G. Strasser M. Helm L. Hvozdara E. Gornik |
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Abstract: | The operation of a unipolar quantum cascade light-emitting diode based on the material system GaAs/AlGaAs is reported. The LED operates at a wavelength of 6.9 μm. Detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm2 the optical output power lies in the ten 10 nW range. Additional absorption and photocurrent measurements provide a complete characterization of the mid-infrared emitter. |
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Keywords: | Electroluminescence Semiconductor quantum wells Unipolar semiconductor laser Light-emitting diode |
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