Sb-capping and decapping of MBE-grown GaSb(100) |
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| Affiliation: | 1. School of Materials Science and Engineering, Anhui University, Hefei, 230601, China;2. School of Integration Circuits, Anhui University, Hefei, 230601, China;3. School of Physics and Optoelectronics Engineering, Anhui University, Hefei, 230601, China;4. Department of Physics, University of North Texas, Denton, TX, 76203, USA |
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| Abstract: | We present a study of GaSb(100) surfaces grown by molecular beam epitaxy, protected by an Sb cap during ambient storage, and annealed in ultra-high vacuum. The surface structure, composition and electronic transitions are investigated with low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Successful Sb-decapping is achieved by annealing at 300° C for 30 min. It leads to a (2 × 3)−c(2 × 6) reconstructed surface with less residual damage and higher Sb concentration than surfaces prepared by sputtering and annealing. |
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