Experimental studies on low frequency noise of Hg0.8Cd0.2 Te photoconductors |
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| Institution: | 1. University of California, Merced, USA;2. University of Cape Town, South Africa;3. University of Jyväskylä, Finland;1. Department of Ecology and Evolutionary Biology, University of Tennessee, Knoxville, TN, United States;2. Department of Chemistry and Biochemistry, University of North Carolina at Wilmington, Wilmington, NC, United States;1. IFOM-p53Lab Joint Research Laboratory, Agency for Science, Technology and Research, Singapore 138648, Singapore;2. IFOM, FIRC Institute of Molecular Oncology, 20139 Milan, Italy;3. Molecular Engineering Laboratory, Agency for Science, Technology and Research, Singapore 138673, Singapore;4. Experimental Therapeutics Center, Agency for Science, Technology and Research, Singapore 138669, Singapore;5. Department of Biochemistry, Yong Loo Lin School of Medicine, National University of Singapore 117597, Singapore;6. Lee Kong Chian School of Medicine, Nanyang Technological University, Singapore 308232, Singapore |
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| Abstract: | Combined with the measurements of material characteristic parameters, detector function parameters and their temperature relation, a series of new noise experimental results on Hg0.8Cd0.2 Te photoconductor are obtained. The Hooge parameter from these measurements ranges from 1.7 x 10−3 to 8.7 x 10−5 for temperatures 90–300 K. The 1/ƒ noise spectrum increases with increasing background emission, which cannot be explained by Hooge's empirical formula. The 1/ƒ noise is less than the lower limit calculated by existing theory. |
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