XPS data for sputter-cleaned In0.53Ga0.47As,GaAs, and InAs surfaces |
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| Institution: | 1. Surface Science Research Centre and Department of Physics, The University of Liverpool, Liverpool L69 3BX, UK;2. Jeremiah Horrocks Institute for Maths, Physics and Astronomy, University of Central Lancashire, Preston PR1 2 HE, UK;3. Department of Physics and Astronomy, Kagoshima University, Korimoto, Kagoshima 890-0065, Japan;4. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980–8577, Japan |
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| Abstract: | Core level binding energies and Auger parameters were determined for In, Ga, and As in the three compounds In0.53Ga0.47As, GaAs, and InAs. The surfaces were cleaned by 1.5 keV Ar ion bombardment. Under this condition the radiation-induced defects are small. In the case of GaAs the Ga and As3d levels become comparable with available data for chemically cleaned surfaces. The high Ga deficiency of chemically cleaned In0.53Ga0.47As surfaces could not be observed. Sputter cleaned surfaces seem to be closer to the bulk composition. |
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