The induction plasma chemical reactor: Part II. Kinetic model |
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Authors: | G. Y. Zhao J. Mostaghimi M. I. Boulos |
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Affiliation: | (1) Institute of Mechanics, Chinese Academy of Sciences, Beijing, People's Republic of China;(2) Department of Chemical Engineering, Université de Sherbrooke, 11K 2R1 Sherbrooke, Québec, Canada |
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Abstract: | A kinetic model has been developed for the prediction of the concentration gelds in an rf plasma reactor. A sample calculation for a SiCl4/H2 system is then performed. The model considers the mixing processes along with the kinetics of seven reactions involving the decomposition of these reactants. The results obtained are compared to those assuming chemical equilibrium. The predictions indicate that an equilibrium assumption will result in lower predicted temperature fields in the reactor. Furthermore, for the chemical system considered here, while differences exist between the concentration fields obtained by the two models, the differences are not substantial. |
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Keywords: | Induction plasma modeling chemical kinetics dissociation of silicon tetrachloride |
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