Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths |
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Authors: | F. Guillot B. Amstatt E. Bellet-Amalric E. Monroy L. Nevou L. Doyennette F.H. Julien Le Si Dang |
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Affiliation: | aEquipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France;bAction OptoGaN, Institut d’Electronique Fondamentale, Université Paris-Sud, UMR 8622 CNRS, 91405 Orsay cedex, France;cEquipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, Laboratoire de Spectrométrie Physique (CNRS UMR 5588), Université Joseph Fourier, 38402 Saint, France |
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Abstract: | We present a study of the effect of Si doping localization on the optical and structural properties of GaN/AlN multiple-quantum-well structures for intersubband (ISB) absorption at 1.55 μm. Samples were either undoped or Si doped in different regions (barrier, quantum well (QW), middle of barrier or middle of QW). Structural characterization by atomic force microscopy and X-ray diffraction does not show significant differences in the crystalline quality. All doped samples present room-temperature p-polarized ISB absorption of about 1%–2% per pass, with a line width of 80–90 meV. In contrast, undoped samples present a weaker ISB absorption with a record line width of 40 meV. Both photoluminescence (PL) and ISB absorption display structured shapes whose main peaks correspond to monolayer fluctuations of the well thickness. The emission and absorption line widths depend on the Si doping concentration, but not on the Si location. |
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Keywords: | GaN Superlattices Intersubband QWIP Molecular-beam epitaxy |
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