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Resistively coupled single-electron transistor using tunnel gate resistor |
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| Authors: | Fujio Wakaya Shinya NakamichiShunji MandaiShuichi IwabuchiKenji Gamo |
| Institution: | 1. Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan;2. Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan;3. Department of Physics, Faculty of Science, Nara Women`s University, Kitauoya-Nishimachi, Nara, 630-8506, Japan |
| Abstract: | A resistively coupled single-electron transistor (R-SET) was fabricated using a modulation-doped heterostructure and metal Schottky gates, and measured at low temperature. Currents of R-SET with tunnel gate resistor were calculated using the orthodox theory. It is shown that the R-SET with tunnel gate resistor has quite similar properties to the originally proposed R-SET. |
| Keywords: | R-SET C-SET Coulomb blockade Coulomb diamond |
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