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Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates
Authors:Sung Heo  JaeGwan Chung  Jae Cheol Lee  Taewon Song  Seong Heon Kim  Dong‐Jin Yun  Hyung Ik Lee  KiHong Kim  Gyeong Su Park  Jong Soo Oh  Dong Wook Kwak  DongWha Lee  Hoon Young Cho  Dahlang Tahi  Hee Jae Kang  Byoung‐Deog Choi
Institution:1. Samsung Advanced Institute of Technology, Yeongtong‐gu, Suwon‐si, Gyeonggi‐do, Korea;2. Department of Physics, Dongguk University, Jung‐gu, Seoul, Korea;3. Department of Physics, Hasanuddin University, Makassar, Indonesia;4. Department of Physics, Chungbuk National University, Cheongju, Korea;5. College of Information and Communication Engineering, Sungkyunkwan University, Jangan‐gu, Suwon, Korea
Abstract:The band alignment and defect states of GaInZnO thin films grown on SiO2/Si via radio frequency (RF) magnetron sputtering were investigated by using X‐ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo‐electron emission and photo‐induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo‐induced current transient spectroscopy and thermally stimulated exo‐electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field‐effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect. Copyright © 2016 John Wiley & Sons, Ltd.
Keywords:defect states  GIZO  REELS  TSEE  PICTS  XPS
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