Growth of cerium tungstate epitaxial layers: influence of temperature

Thin films of cerium tungstate prepared in situ by cerium deposition in oxygen atmosphere onto the W(100) single‐crystal were investigated by means of photoelectron spectroscopy and low‐energy electron diffraction (LEED). The studied temperature range was 173–1073 K. It was found that the temperature necessary for the oriented growth of Ce₆WO₁₂(100) was 673 K, and at higher temperatures, the LEED pattern improved. Photoemission data revealed the partial formation of CeO₂ on the surface at preparation temperatures below 473 K due to limited diffusion of tungsten atoms from the substrate. Copyright © 2015 John Wiley & Sons, Ltd.