Sn3.0Ag0.5Cu倒装焊点中的电迁移

采用10⁴ A/cm²数量级的电流密度对Sn30Ag05Cu倒装焊点中的电迁移机理作了研究.电迁移引起的原子（或空位）的迁移以及在此过程中形成的焦耳热，使Sn30Ag05Cu倒装焊点的显微形貌发生变化.电迁移作用下，由于空位的定向迁移和局部的电流聚集效应使阴极芯片端焊料与金属间化合物界面形成薄层状空洞.处于阴极的Cu焊盘的Ni（P）镀层与焊料间也产生了连续性空洞，但空洞面积明显小于处于阴极的芯片端焊料与金属间化合物界面.焊盘中的Cu原子在电迁移作用下形成与电子流方向一致的通量，最终导致焊点高电流密度区域出现连续性的金属间化合物且金属间化合物量由阴极向阳极逐渐增多.关键词：Sn30Ag05Cu倒装焊点电迁移

Electromigration in Sn3.0Ag0.5Cu flip chip solder joint

Electromigration in Sn30Ag05Cu flip chip solder joints was investigated under a current density of the order of 10⁴ A/cm². The transfer of atoms or vacancies and the formation of Joule heating induced by electromigration were studies in terms of microstructural evolution. The formation of pancake-type void at the interface between solder and intermetallic compound was dominated by current concentration and the directional transfer of vacancies induced by electromigration. Series of voids were also found at the interface between Ni（P） finishes and solder joint. The area of voids at substrate side are less than that at chip side. The flux of Cu atoms in the pad has the same direction as the electron flux. The transfer of Cu atoms from pad to solder joint led to the formation of large areas of intermetallic compound in solder joint, and the amount of intermetallic compound increased along the direction of electron flux.