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半桥逆变式功率VMOSFET超声电发生器的研制
引用本文:朱武,金长善,孙丽威.半桥逆变式功率VMOSFET超声电发生器的研制[J].应用声学,1998,17(2):40-43,25.
作者姓名:朱武  金长善  孙丽威
作者单位:哈尔滨工业大学!哈尔滨,150001,哈尔滨工业大学!哈尔滨,150001,哈尔滨工业大学!哈尔滨,150001
摘    要:本文介绍了一种用于超声波电火花复合加工的超声发生器,它以功率VMOS场效应管作开关元件,以单片集成电路TL494作为信号源控制核心。发在具有工作稳定可行以的特点。

关 键 词:超声电发生器  驱动电路  超声波加工  电火花加工

Developing a half bridge inverting power VMOSFET ultrasonic electric generator
Zhu Wu,Jin Changshan and Sun Liwei.Developing a half bridge inverting power VMOSFET ultrasonic electric generator[J].Applied Acoustics,1998,17(2):40-43,25.
Authors:Zhu Wu  Jin Changshan and Sun Liwei
Institution:Harbin Institute of Technology Harbin, 150001;Harbin Institute of Technology Harbin, 150001;Harbin Institute of Technology Harbin, 150001
Abstract:An ultrasonic electric generator, which can be used in an ultrasonic EDM system, is described. A power VMOSFET works as the switching element, while a TL494 works as the heart of signal control. The generator is characterized by high reliability and light weight.
Keywords:Ultrasonic electric generator  Driving circuit  Thermal resistance  
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