Mid infrared band gap properties of 3-dimensional silicon inverse opal photonic crystal |
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Authors: | Yu-Jie Li Kai Xie Jing Xu Pan-Pan Du |
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Institution: | (1) Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany;(2) FORTH/IESL, Voutes Str., P.O. Box 1527, 71110 Heraklion, Crete, Greece; |
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Abstract: | By the solvent vaporization convection self-assembly method, 1.86 μm silica microspheres were assembled into a colloidal crystal
template with long-range order. High refractive index silicon was then filled in the voids of the silica template by the low
pressure chemical vapor deposition method. A 3-dimensional silicon inverse opal photonic crystal was obtained with a photonic
band gap simulated by a plane wave expansion method. Its micro modality and photonic band gap properties were characterized
by scanning electron microscopy and Fourier transform IR spectrometer. There was a good agreement between the measured spectra
and the simulated results. The tilt-angle reflectance spectra showed that an obvious reflection peak at 3319 nm stayed in
existence with different incidence directions. This result proved that silicon inverse opal has a complete photonic band gap
in the mid infrared range. This study opens up an opportunity to create Si-based photonic crystal devices for atmosphere mid
infrared photodetection. |
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