Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors |
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Authors: | Y. OhmuraY. Zohta M. Kanazawa |
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Affiliation: | Toshiba R & D Center, Tokyo Shibaura (Toshiba) Electric Co. Ltd., Kawasaki, Japan |
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Abstract: | Sheet Hall coefficients and resistivities of n-type Si layers doped with shallow donors produced by proton bombardment have been measured between 35 and 300°K. The donor ionization energy is (26 ± 1) meV. The donor concentration profile has been determined. |
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