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Temperature dependence of the energy separation between Γ and L minima in n-type GaSb
Authors:G. BastideB. Pistoulet  J.L. RobertC. Roustan
Affiliation:Centre d''Etudes d''Electronique des Solides, associé au CNRS, Université des Sciences et Techniques, 34,000 Montpellier, USA
Abstract:Energy separation ΔEc between Λ and L minima of GaSb conduction band is deduced from temperature dependence of tunneling current in pn junctions. ΔEc is found to inceasing vx. temperature with a coefficient d(ΔEc/dT) of about - 2.10-4eV/dgK.
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