The spectrum and decay of the recombination radiation from strongly excited silicon |
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Authors: | NG NilssonKG Svantesson |
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Institution: | Department of Physics III, Royal Institute of Technology, S-100 44, Stockholm 70, Sweden |
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Abstract: | The spectral distribution of the recombination radiation from silicon during and after excitation by a Q-switched ruby laser has been measured and analyzed. The interpretation assumes a third-order (Auger) recombination process and a simple parabolic band structure. It takes into account the heating of the sample at the surface and the reduction of the band gap due to the high carrier density. Measurements of the spectral distribution as a function of time gives a value of the Auger transition rate factor γ3 = 2·10−31 cm6sec−1. |
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