Characterization of the interfacial reaction between sputter-deposited Ni film and Si substrate |
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| Authors: | R Zhou CC Chen M Hashimoto J Shi Y Nakamura |
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| Institution: | (1) Department of Applied Physics and Chemistry, University of Electro-Communications, Chofu, Chofugaoka 1-5-1, Tokyo 182-8585, Japan;(2) Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, Meguro-ku 2-12-1, Tokyo 152-8552, Japan |
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| Abstract: | In the present work, we report the interfacial reaction characteristics between sputter-deposited Ni film and a single crystalline Si substrate. The effect of substrate bias during the deposition process on the interfacial reaction is also discussed. It was found that sputter deposition with a substrate bias can promote the interfacial reaction between Ni film and Si substrate. Under our experimental conditions, Ni2Si (orthorhombic) with good crystallinity formed in the film when it was deposited at 200 °C and with a -80 V substrate bias. Such films had relatively low resistivity. Upon thermal annealing at 500 °C, NiSi formed through further reaction, however there is almost no change in resistivity. PACS 67.57.Np; 68.55.-a; 68.35.Fx |
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