Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part II: InP, InSb, InGaP, and InGaAs |
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| Authors: | Y B Hahn D C Hays H Cho K B Jung E S Lambers C R Abernathy S J Pearton W S Hobson R J Shul |
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| Institution: | (1) Department of Materials Science and Engineering, University of Florida, Gainesville, Florida, 32611;(2) School of Chemical Engineering and Technology, Chonbuk National University, Chonju, 561-756, Korea;(3) Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey, 07974;(4) Sandia National Laboratories, Albuquerque, New Mexico, 87185 |
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| Abstract: | A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 for InP, 3.6 for InSb, 2.3 for InGaP, and 2.2  m/min for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: The etch rates increased substantially with increasing ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than ICl/Ar, but the etched surface morphologies were fairly poor for both chemistries. |
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| Keywords: | ICP compound semiconductors interhalogens |
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