Intensity distribution in the bands of theD
1Π →X
1Σ+ system of SnO |
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| Authors: | N Rajamanickam |
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| Institution: | (1) Department of Physics, University of Mysore, 570006 Mysore, India;(2) Department of Physics, VHNSN College, 626002 Virudhunagar, India |
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| Abstract: | Relative integrated intensities of the bands of theD
1Π →X
1Σ+ system of SnO have been measured by the technique of heterochromatic photographic photometry. Using the Rydberg-Klein-Rees
Franck-Condon factors andr-centroids, the variation of electronic transition momentR
e
with the internuclear separationr is found to beR
e
(r)=const. (0.564r−1) in the range of 1.865 A≤r≤2.041A. The relative band strengths are derived. Effective vibrational temperature of the source is found to be 2559 K. |
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| Keywords: | Integrated intensities electronic transition moment relative band strengths vibrational temperature SnO(D 1Π → X 1Σ +) band system |
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