Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy |
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Authors: | II Izhnin IA Denisov NA Smirnova M Pociask and KD Mynbaev |
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Institution: | (1) BAE Systems, 2 Forbes Road, Lexington, MA 02421, USA;(2) Department of Materials Science Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA |
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Abstract: | Ion milling, as a tool for “stirring” defects in HgCdTe by injecting high concentration of interstitial mercury atoms, was
used for studying films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The films appeared to have very low residual
donor concentration (∼1014 cm−3), yet, similar to the material grown by molecular beam epitaxy, contained Te-related neutral defects, which the milling activated
electrically. It is shown that ion milling has a stronger effect on HgCdTe defect structure than thermal treatment, and yet
eventually brings the material to an “equilibrium” state with defect concentration lower than that after low-temperature annealing. |
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