Experimental studies of complex crater formation under cluster implantation of solids |
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Authors: | S?Prasalovich Email author" target="_blank">V?PopokEmail author P?Persson E EB?Campbell |
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Institution: | 1.Department of Physics,G?teborg University,G?teborg,Sweden;2.Department of Physics and Measurement Technology,Link?ping University,Link?ping,Sweden |
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Abstract: | The results of a systematic study of surface defect
formation after energetic Arn+ (n = 12, 22, 32, 54)
and Xen+ (n = 4, 16) cluster ion implantation into silicon
and sapphire are presented. Implantation energies vary from 3 to
18 keV/ion. Two cases of comparative studies are carried out: the
same cluster species are implanted into two different substrates,
i.e. Arn+ cluster ions into silicon and sapphire and two
different cluster species Arn+ and Xen+ are implanted into
the same kind of substrate (silicon). Atomic force, scanning
electron and transmission electron microscopies (AFM, SEM and TEM)
are used to study the implanted samples. The analysis reveals the
formation of two types of surface erosion defects: simple and
complex (with centrally positioned hillock) craters. It is found
that the ratio of simple to complex crater formation as well as
the hillock dimensions depend strongly on the cluster species,
size and impact energy as well as on the type of substrate
material. Qualitative models describing the two comparative cases
of cluster implantation, the case of different cluster species and
the case of different substrate materials, are proposed. |
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Keywords: | |
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