Delta doping in silicon |
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Authors: | H-J Gossmann E F Schubert |
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Institution: | 1. AT&2. T Bell Laboratories , Murray Hill, NJ, 07974 |
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Abstract: | Two-dimensional doping sheets (“δ-doping”) are integral parts of many novel semiconductor device concepts. Their practical realization in silicon (Si), however, was long delayed by the difficulty to introduce dopants into Si in a well-controlled way during epitaxial growth. Recent advances in the understanding of epitaxial growth and the incorporation of dopants in Si have overcome these difficulties and opened a new field in Si materials and device research. In this article, we review the growth, processing, and characterization of epitaxially grown 5-doped Si. Furthermore, we discuss the electronic subband states of such structures. Finally, we give an overview of device concepts that use 5-doping and analyze their properties. |
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Keywords: | Si epitaxial growth dopants in Si electronic subband states 6-doping |
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