Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells |
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| Authors: | S.M. Olaizola W.H. Fan D.J. Mowbray M.S. Skolnick P.J. Parbrook A.M. Fox |
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| Affiliation: | aDepartment of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK;bCEIT & TECNUN (University of Navarra), Paseo Manuel Lardizabal 15, 20018 San Sebastian, Spain;cEPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK |
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| Abstract: | We have studied the photoluminescence and time-resolved photoluminescence of a set of InGaN quantum wells with well thickness from 1 to 7.5 nm. An analysis of the phonon satellites at 5 K shows Huang–Rhys factors from 0.32 to 0.44. The increase of this factor is caused by the electron–hole separation induced by the piezoelectric field. The time-resolved photoluminescence at room temperature shows that the decay time of the 1 and 2 nm wells does not depend on the wavelength. The maximum decay time is around 600 ps for the 2, 3 and 4 nm wells. However, for the 3 and 4 nm wells a decrease of the photoluminescence decay time is observed at the highest wavelengths. This suggest the onset of a non-radiative process in these samples. The optimum well width for efficient emission for these single quantum wells was found to be 2 nm. |
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| Keywords: | InGaN Quantum wells Time-resolved photoluminescence Decay time |
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