Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers |
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| Authors: | Yu. N. Drozdov M. N. Drozdov O. I. Khrykin V. I. Shashkin |
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| Affiliation: | 1.Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhni Novgorod,Russia |
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| Abstract: | The features and results of X-ray diffraction analysis of GaN films are presented. The films are grown by metalorganic vapor-phase epitaxy on c-plane sapphire substrates using GaN or AlN nucleation layers deposited at a low temperature. Measurements of the twist angle and concentrations of Al x Ga1-x N solid solutions are discussed in detail. |
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