Photoconductive response of GaAs epitaxial layers |
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| Authors: | E A Anagnostakis |
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| Institution: | (1) Section of Solid State Physics, Department of Physics, University of Athens, GR-15771 Zografos, Greece |
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| Abstract: | In the present work the photoconductive response of low resistivity, n-type GaAs epitaxial layers is studied by experimentally monitoring the dependence of the photoconductive gain (PG) optoelectronic parameter upon incident photon flux and temperature. The characterized samples fall into three major categories: ion implanted (II) GaAs epilayers formed within undoped, semi-insulating GaAs substrates; GaAs epitaxial layers grown by liquid phase epitaxy (LPE) on Cr-doped, semi-insulating GaAs substrates; and ungated GaAs MESFETs. |
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| Keywords: | 7340L 72 40 72 20J 72 80E |
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