Time evolution of the infrared laser ablation plasma plume of SiO |
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Authors: | L Diaz J J Camacho J P Cid M Martin J M L Poyato |
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Institution: | 1. Instituto de Estructura de la Materia, CSIC, Serrano 121, 28006, Madrid, Spain 2. Departamento de Química-Física Aplicada, Facultad de Ciencias (UAM), 28049, Madrid, Spain 3. Instituto de Química-Física “Rocasolano”, CSIC, Serrano 119, 28006, Madrid, Spain
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Abstract: | The spatio-temporal evolution of the silicon monoxide SiO plasma produced by a high-power CO2 pulsed laser has been investigated using optical emission spectroscopy (OES) and imaging methods. The formed plasma was found to be strongly ionized, yielding Si+, O+, Si2+, O2+ and Si3+ species, rich in neutral silicon and oxygen atoms, and very weak molecular bands of SiO time-integrated and time-resolved two-dimensional OES plasma profiles were recorded as a function of emitted wavelength and distance from the target. The temporal behavior of specific emission lines of Si, Si+, O+, Si2+ and O2+ was characterized. The results show a faster decay of O2+ and Si2+ than that of O+, Si+ and Si. The Stark broadening of isolated single-ionized silicon emission lines was employed for deducing the electron density during the plasma expansion. The relative intensities of two Si2+ lines were used to calculate the time evolution of the plasma temperature. |
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