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Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP heterostructures with pseudomorphic self-assembled quantum dots |
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| Authors: | D S Abramkin V T Shamirzaev M A Putyato A K Gutakovskii T S Shamirzaev |
| Institution: | 1. Russian Academy of Sciences, Novosibirsk, 630090, Russia 2. Novosibirsk State Technical University, Novosibirsk, 630092, Russia 3. Novosibirsk State University, Novosibirsk, 630090, Russia |
| Abstract: | Band alignment of heterostructures with pseudomorphic GaSb1 ? x P x /GaP self-assembled quantum dots (SAQDs) lying on a wetting layer was studied. Coexistence of type-I and type-II band alignment was found within the same heterostructure. Wetting layer has band alignment of type-I with the lowest electronic state belonging to the X XY valley of GaSb1 ? x P x conduction band, in contrast to SAQDs, which have band alignment of type-II, independently of the ternary alloy composition x. It is shown that type-I-type-II transition is a result of GaP matrix deformation around the SAQD. |
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