Many-electron Coulomb correlations in hopping transport along layers of quantum dots |
| |
Authors: | A I Yakimov A V Nenashev A V Dvurechenskii M N Timonova |
| |
Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia;(2) Novosibirsk State University, Novosibirsk, 630090, Russia |
| |
Abstract: | Experimental data are analyzed on the hopping transport of holes in two-dimensional layers of Ge/Si(001) quantum dots (QDs) under conditions of the long-range Coulomb interaction of charge carriers localized in QDs, when the temperature dependence of the conductivity obeys the Efros-Shklovskii law. It is found that the parameters of hopping conduction significantly deviate from the predictions of the model of one-electron excitations in “Coulomb glasses.” Many-particle Coulomb correlations associated with the motion of holes localized in QDs play a decisive role in the processes of hopping charge transfer between QDs. These correlations lead to a substantial decrease in the Coulomb barriers for the tunneling of charge carriers. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|