Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer |
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| Authors: | Jian-Yong Xiong Yi-Qin Xu Bin-Bin Ding Fang Zhao Jing-Jing Song Shu-Wen Zheng Li Zhang Tao Zhang Guang-Han Fan |
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| Affiliation: | 1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China
2. Guangdong General Research Institute for Industrial Technology, Guangzhou, 510650, China
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| Abstract: | The blue InGaN light-emitting diodes (LEDs), employing a lattice-compensated p-AlGaN/InGaN superlattice (SL) interlayer to link the last quantum barrier and electron blocking layer (EBL), are proposed and investigated numerically. The simulation results indicate that the newly designed LEDs have better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region over the conventional LEDs mainly attributed to the mitigated polarization-induced downward band bending. Furthermore, the markedly improved output power and efficiency droop are also suggested when the conventional LEDs corresponding to experiment data are replaced by the newly designed LEDs. |
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