Static electrical conductivity of a doped semiconductor

This paper evaluates corrections to the static electrical conductivity of a nondegenerate semiconductor, doped with dopants of one type, taking into account the interaction of the charge carriers both with a random field and with lattice oscillations. The results obtained may be generated to the case of an arbitrary random field.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 16, No. 7, pp. 14–21, July, 1974.The author wishes to express his profound indebtedness to V. L. Bonch-Bruevich for proposing this topic.