CVD法制备p-ZnO薄膜/n-Si异质结发光二极管及其性能研究

利用简单的化学气相沉积方法, 首先在n-Si衬底上生长Sb掺杂p-ZnO薄膜, 并在此基础上制作了p-ZnO/n-Si异质结发光二极管．对制备的Sb掺杂ZnO薄膜 在800 ℃下进行了热退火处理, 发现退火后样品的晶体质量和表面形貌都得到明显提高, 并且薄膜呈现的电导类型为p型, 载流子浓度为9.56× 10¹⁷ cm^-3. 此外, 该器件还表现出良好的整流特性, 正向开启电压为4.0 V, 反向击穿电压为9.5 V. 在正向45 mA的注入电流条件下, 器件实现了室温下的电致发光. 这说明较高质量的ZnO薄膜也可以通过简单的化学气相沉积方法来实现, 这为ZnO基光电器件的材料制备提供了一种简单可行的方法. 关键词： CVD p-ZnO 异质结 电致发光

p-ZnO thin film/n-Si heterojunction light-emitting diode fabricated by chemical vapor deposition and its characterization

The Sb-doped ZnO film/n-Si heterojunction is synthesized by simple chemical vapor deposition method. The quality of crystal and surface morphology of Sb-doped ZnO film are improved after annealing at 800 ℃, which exhibits effective p-type conductivity with a hole concentration of 9.56× 10¹⁷ cm^-3. The properties of the p-ZnO/n-Si heterojunction photoelectric device are investigated. The resuets show that this device has good rectifier characteristics with a positive open electric of 4.0 V, and a reverse breakdown voltage of 9.5 V. The electroluminescent is realized at room temperature under the condition of forward current 45 mA. These results also confirm that the high-quality ZnO film can be prepared by the simple chemical vapor deposition method, which opens the way for simple preparation of materials applied to ZnO based opto-electronic device.