Carbon nanotube transistors with graphene oxide films as gate dielectrics |
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| Authors: | FU WangYang LIU Lei WANG WenLong WU MuHong XU Zhi BAI XueDong & WANG EnGe Beijing National Laboratory for Condensed Matter Physics |
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| Institution: | FU WangYang,LIU Lei,WANG WenLong,WU MuHong,XU Zhi,BAI XueDong & WANG EnGe Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China |
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| Abstract: | Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a... |
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| Keywords: | carbon-based nanoelectronics graphene oxide gate dielectrics |
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