Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates |
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| Authors: | I. D. Loshkarev A. P. Vasilenko E. M. Trukhanov A. V. Kolesnikov M. A. Putyato B. R. Semyagin V. V. Preobrazhenskii O. P. Pchelyakov |
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| Affiliation: | 1537. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
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| Abstract: | The structure of GaAs films grown on Si(001) vicinal substrates (6° rotation about 〈011〉 axis) formed in two ways of nucleation, As deposition on Si and substitution of Si monolayer by As monolayer, is studied. X-ray diffractometry is used to find that the rotation direction of a crystal lattice depends on the manner of nucleation. An optional model of the formation of film dislocation structures is proposed. |
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