As保护下的生长中断时间对AlSb/InAs超晶格界面粗糙度的影响

用分子束外延设备(MBE)在GaAs(100)衬底上生长了InSb型界面的AlSb/InAs超晶格，界面生长过程中采用了As保护下不同的中断时间.运用掠入射X射线反射技术(GIXRR)对样品进行了测量，并对测量结果进行了模拟和分析，发现As保护下生长中断20 s能获得最平整的AlSb/InAs界面.结合分析显微镜下观察到的样品形貌，过短的界面中断时间会导致界面富In并形成In点，而过长的中断时间会导致AlAs型界面的形成，两者都使界面变得粗糙.另外，还讨论了生长中断在分子束外延生长中的应用.关键词：分子束外延生长中断超晶格掠入射X射线反射

As-soak dependence of interface roughness of AlSb/InAs superlattice

Different As-soak time is applied during InSb-like interfaces growth of InAs/AlSb superlattices on GaAs(100) substrates. The interface roughness is studied by grazing incidence X-ray reflectivity. The reflectivity curves are simulated by standard software and the rms roughness of the interfaces is obtained. It was hown that the sample with As-soak time of 20 seconds has the most smooth interfaces. By analyzing the microscope images of the samples, we suggest that In-rich interfaces will be formed with too short As-soak time and AlAs-like interfaces are obtained with too long As-soak time, and in hoth cases the interface will be cearsened. Grazing incidence X-ray reflectivity is also recommended as a powerful tool for assessing the structure of superlattices.