D-Cems on iron films on silicon and PTFE: Effects of ion bombardment in the electronic stopping region |
| |
| Authors: | M. Carbucicchio A. Valenti |
| |
| Affiliation: | (1) Department of Physics, University, Parma, Italy |
| |
| Abstract: | Depth-selective Mössbauer measurements were performed on as evaporated and proton bombarded iron films grown on PTFE and silicon single crystals. The results contribute to the understanding of the phenomena induced at the film/substrate interface by ion bombardment in the electronic stopping region. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
