| 1053 nm超辐射发光二极管量子阱的设计 |
| |
| 引用本文： | 黄鑫,宋爱民,段利华.1053 nm超辐射发光二极管量子阱的设计[J].半导体光电,2010,31(4). |
| |
| 作者姓名： | 黄鑫 宋爱民 段利华 |
| |
| 作者单位： | 重庆邮电大学,光电工程学院,重庆,400065;重庆教育学院,重庆,400067;重庆光电技术研究所,重庆,400060 |
| |
| 摘 要： | 对于给定波长的超辐射发光二极管,根据应变量子阱理论,研究了器件有源层组分与量子阱宽度的关系,并讨论了量子阱中In组分相对于不同波长的最小临界值.用MOCVD生长器件,实验结果与理论计算值吻合.
|
| 关 键 词： | 超辐射发光二极管 单量子阱 MOCVD |
Design of Quantum Well in 1053 nm Superluminescent Diodes |
| |
| HUANG Xin,SONG Aimin,DUAN Lihua.Design of Quantum Well in 1053 nm Superluminescent Diodes[J].Semiconductor Optoelectronics,2010,31(4). |
| |
| Authors: | HUANG Xin SONG Aimin DUAN Lihua |
| |
| Institution: | HUANG Xin1,SONG Aimin2,DUAN Lihua3(1.College of Electronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,CHN,2.Chongqing College of Education,Chongqing 400067,3.Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN) |
| |
| Abstract: | The relationship between the width of the single quantum well(SQW)and the Indium composition in the 1 053nm Superluminescent Diodes(SLD)was researched according to the theory of strained effect in the quantum well.The minimum Indium composition for the given lasing wavelength was discussed.Then experiments were carried out on the diodes grown by Metal Organic Chemical Vapor Deposition(MOCVD).The experimental results show that the calculated value agrees well with theoretical calculations. |
| |
| Keywords: | MOCVD |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
