| a-Si:H薄膜的磷-碳二元复合掺杂改性研究 |
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| 引用本文： | 蔡海洪,李伟,蒋亚东,龚宇光,李志.a-Si:H薄膜的磷-碳二元复合掺杂改性研究[J].半导体光电,2010,31(3). |
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| 作者姓名： | 蔡海洪 李伟 蒋亚东 龚宇光 李志 |
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| 作者单位： | 电子科技大学,光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学,光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学,光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学,光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学,光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 摘 要： | 以SiH4,PH3,CH4为源气体,采用射频等离子增强化学气相沉积(RF-PECVD)方法,通过改变CH4流量制备了磷、碳二元掺杂非晶硅薄膜,研究了磷、碳二元掺杂对薄膜微观结构和光学性能的影响.用X射线光电子能谱仪(XPS)观察到了C-Si峰的存在,同时发现随着CH4流量的增加,薄膜中C元素含量逐渐增大.傅里叶转换红外光谱(FTIR)测试表明,掺杂薄膜中的H含量随着CH4流量的增加逐渐增大,由11.5%增大到24.6%.光学性能测试表明,随着CH4流量的增加,掺杂薄膜的折射率逐渐降低,而光学带隙逐渐增加.
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| 关 键 词： | a-Si:H薄膜 磷-碳掺杂 XPS FTIR 光学性能 |
Study on Properties of P-C Doped a-Si:H Thin Films |
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| CAI Haihong,LI Wei,JIANG Yadong,GONG Yuguang,LI Zhi.Study on Properties of P-C Doped a-Si:H Thin Films[J].Semiconductor Optoelectronics,2010,31(3). |
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| Authors: | CAI Haihong LI Wei JIANG Yadong GONG Yuguang LI Zhi |
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| Institution: | CAI Haihong,LI Wei,JIANG Yadong,GONG Yuguang,LI Zhi(State Key Lab. of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,CHN) |
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| Abstract: | Hydrogenated amorphous silicon (a-Si:H) thin films co-doped with phosphorus (P) and carbon (C) were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) using SiH4,PH3 and CH4 as the source gases at various CH4 gas flow rates. The influence of carbon on the microstructure and optical properties of P-doped thin films was studied. The x-ray photoelectron spectroscopy (XPS) spectra show that C-Si bonding can be observed clearly and the C content in the films increases with the incre... |
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| Keywords: | XPS FTIR |
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