快重离子辐照聚酰亚胺潜径迹的电子能损效应

快重离子辐照聚合物材料时，由于密集电离激发在其路径上产生几纳米直径的潜径迹，径迹形貌受离子种类、离子能量等多种因素的影响.为了研究电子能损对径迹形成所起的作用，利用1.158GeV 的Fe⁵⁶离子和 1.755GeV Xe¹³⁶离子在室温真空环境下辐照叠层聚酰亚胺(PI)薄膜，结合傅里叶转换红外光谱(FTIR)分析技术对辐照引起的化学变化进行了测量.聚酰亚胺官能团的降解及炔基的生成是离子辐照聚合物的主要特征，在注量1×10¹¹到6×10¹²/cm²范围及较宽的电子能损(dE/dX)_e范围 (Fe⁵⁶ 离子：2.2 到 5.2 keV/nm， Xe¹³⁶ 离子：8.6 到 11.3 keV/nm)对官能团的断键率及炔基生成率进行了研究. 红外结果显示在实验涉及的能损范围都有炔基生成，应用径迹饱和模型对实验结果进行拟合，不同能损下的平均损伤径迹半径及炔基生成径迹半径被得到，通过热峰模型对实验结果拟合，给出了离子在聚酰亚胺中产生潜径迹的能损阈值，实验给出的径迹形貌的电子能损效应曲线与热峰模型预言走势基本一致.关键词：离子辐照潜径迹红外光谱热峰模型

Electronic energy loss of the latent track in heavy ion-irradiated polyimide

In the interaction process of a swift heavy ion (SHI) and polymer, a latent track with radius of several nanometers appears near the ion trajectory due to the dense ionization and excitation. To describe the role of electronic energy loss (dE/dX)_e, multi-layer stacks (with different dE/dX) of polyimide (PI) films were irradiated by different SHIs (1.158GeV Fe⁵⁶ and 1.755GeV Xe¹³⁶) under vacuum at room temperature. Chemical changes of modified PI films were studied by Fourier Transform Infrared (FTIR) spectroscopy. The main feature of SHI irradiation is the degradation of the functional group and creation of alkyne. The chain disruption rate of PI was investigated in the fluence range from 1×10¹¹ to 6×10¹² ions/cm² and a wider energy stopping power range (2.2 to 5.2 keV/nm for Fe⁵⁶ ions and 8.6 to 11.3 keV/nm for Xe¹³⁶ ions). Alkyne formation was observed over the electronic energy loss range of interest. Assuming the saturated track model (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were deduced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal spike model and the threshold electronic energy loss of track formation S_et in PI was deduced. The analysis of the irradiated PI films shows that the predictions of the thermal spike model are in qualitative agreement with the curve shape of experimental results.