本征吸除硅片特性研究

本文描述硅本征吸杂片的特性参数,如吸除区宽度、洁净度,氧沉淀密度、MOS电容寿命,介绍了表面态密度及残余间隙氧浓度的检测方法和工艺对参数的影响及参数之间的内在联系,文章还实验论证了不同参数水平对器件成品率的影响,建立了以MOS电容寿命为主导的参数控制方法,利用本文提供的控制参数,可使CCD-512器件成品率达60％,以上优品率≥85％。

Characteristics of Intrinsic Gettered Silicon Wafers

Characteristic parameters for intrinsic gettered silicon wafers, such, as width and cleanliness of the denuded zone, oxygen precipitates density, gene ration- re combi-.nation lifetime of MOS capacitors,surface state density and the concentration of interstitial oxygen residuals,are discussed and their test methods are described.The interrelations between these, parameters and their effects on device performances and yields are analyzed. Based on the generation-recombination lifetime of MOS capcitors, a technique for the parameter control is established. Using the parameters controlled with the said technique, a yield of 60% has been obtained for the CCD-512 devices, of which the .quality rate reached 85%.