Amplified luminescence in InGaAs/AlGaAs laser diode arrays at high pump levels |
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| Authors: | M V Bogdanovich V V Kabanov Y V Lebiadok A A Ramanenka A G Ryabtsev G I Ryabtsev M A Shchemelev S K Mehta |
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| Institution: | 1.B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus,Minsk,Belarus;2.Belarusian State University,Minsk,Belarus;3.Solid State Physics Laboratory,Delhi,India |
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| Abstract: | The development of amplified luminescence fluxes in powerful InGaAs/AlGaAs laser diode arrays (lasing wavelength 940–960 nm)
has been studied experimentally and theoretically at pump levels above the threshold value. Flux density values for amplified
luminescence propagation along (1.88⋅109 W/m2) and across (1.21⋅109 W/m2) the laser diode array cavity axis have been evaluated for the threshold pump level at room temperature (293 K). The contribution
of the recombination rate induced by the amplified luminescence to the threshold current generation of the laser diode array
reaches 7%. It has been shown that the amplified luminescence flux density is increased by 49% as the pump level rises from
one to three threshold values. |
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