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Enhanced selectivity towards O(2) and H(2) dissociation on ultrathin Cu films on Ru(0001)
Authors:M Minniti  D Farías  P Perna  R Miranda
Institution:Departamento de Fi?sica de la Materia Condensada, Universidad Auto?noma de Madrid, Cantoblanco, 28049 Madrid, Spain.
Abstract:The reactivity of Cu monolayer (ML) and bilayer films grown on Ru(0001) towards O(2) and H(2) has been investigated. O(2) initial sticking coefficients were determined using the King and Wells method in the incident energy range 40-450 meV, and compared to the corresponding values measured on clean Ru(0001) and Cu(111) surfaces. A relative large O(2) sticking coefficient (~0.5-0.8) was measured for 1 ML Cu and even 2 ML Cu/Ru(0001). At low incident energies, this is one order of magnitude larger than the value observed on Cu(111). In contrast, the corresponding reactivity to H(2) was near zero on both Cu monolayer and bilayer films, for incident energies up to 175 meV. Water adsorption on 2 ML Cu/Ru(0001) was found to behave quite differently than on the Ru(0001) and Cu(111) surfaces. Our study shows that Cu/Ru(0001) is a highly selective system, which presents a quite different chemical reactivity towards different species in the same range of collision energies.
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