首页 | 本学科首页   官方微博 | 高级检索  
     

一种用于偏扫电流校正的特征点参数采集装置
引用本文:朱进鹏,韦寿祺,刘胜. 一种用于偏扫电流校正的特征点参数采集装置[J]. 强激光与粒子束, 2017, 29(7): 074002. DOI: 10.11884/HPLPB201729.160483
作者姓名:朱进鹏  韦寿祺  刘胜
作者单位:1.桂林电子科技大学, 广西 桂林 541 004
摘    要:电子束快速成型设备偏扫系统工作频率高,磁偏扫装置的铁损、涡流等损耗导致偏扫轨迹产生偏差。通过获取偏扫区域内特征点基准偏扫参数并由插补算法计算区域内任意一点偏扫参数,能够较好地抑制动态偏差;但由光学观察系统判断电子束斑点位置所获得的基准偏扫参数精确性较低。为提高偏扫轨迹精度,在现有电子束快速成型机上加装一种特征点参数采集装置,收集产生的二次反射电子,通过二次反射电子信号判断特征点通孔中心与电子束斑点中心的对中性。实验表明:当电子束斑点位于特征点中心且聚焦于上表面时,二次反射电子信号最小,此时获得的基准偏扫参数精确性高,能够提高电子束偏扫加工的精度。

关 键 词:偏扫电流   校正   特征点   参数采集   二次反射电子
收稿时间:2016-10-02

A parameter acquisition device for deflection scanning current correction
Affiliation:1.Guilin University of Electronic Technology,Guilin 541004,China
Abstract:Electron beam rapid prototyping machine has high working frequency, trajectory deviation can be caused by many factors, such as iron losses and eddy. We conducted interpolation algorithm to restrain dynamic deviation by getting deflection scanning parameters. However, the way to acquire parameters through optical observation system has relatively low precision. In order to improve the trajectory precision, a parameter acquisition device is installed on the existing electron beam rapid prototyping machine, it can collect secondary reflection electrons and convert them into voltage signal and make it displayed. We can judge the relative position of hole center and electron beam center by the displayed signal. Experiments show that: when the electron beam focuses on the upper surface and its spot locates in the center of the feature point, secondary reflection electron signal is the minimum; meanwhile, the recorded deflection and scanning parameter has high accuracy, therefore the deflection scanning trajectory can be greatly improved.
Keywords:
本文献已被 CNKI 等数据库收录!
点击此处可从《强激光与粒子束》浏览原始摘要信息
点击此处可从《强激光与粒子束》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号