Surface States in the AlxGa1-xN Barrier in AlxGa1-xN/GaN Heterostructures |
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作者姓名: | 刘杰 沈波 王茂俊 周玉刚 陈敦军 张荣 施毅 郑有Dou |
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作者单位: | NationalLaboratoryofSolidStateMicrostructuresandDepartmentofPhysics,NanjingUniversity,Nanjing210093 |
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摘 要: | Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 10^12cm^-2eV^-1, and the time constant is about 1μs. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passlvate the surface states effectively.
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关 键 词: | 异质结 氮化镓 表面态 半导体材料 电容-电压测量 掺杂 |
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