Pressure induced insulator-metal transition in quasi one-dimensional niobium tetraiodide |
| |
| Authors: | H. Kawamura I. Shirotani K. Tachikawa |
| |
| Affiliation: | 1. National Research Institute for Metals, 2-3-12, Nakameguro, Meguro-ku, Tokyo 153, Japan;2. The Institute for Solid State Physics, The University of Tokyo, Roppongi, Tokyo, Japan |
| |
| Abstract: | The resistivity of a quasi one-dimensional semiconductor NbI4 was measured at high pressures. The resistivity decreased monotonously with increasing pressure. The activation energy of 0.12 eV at atmospheric pressure decreased to 0.06 eV at 100 kbar and to 0.02 eV at 130 kbar. The temperature coefficient of resistivity becomes positive at about 150 kbar. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
