Analysis of faceting of grain boundaries in GaN |
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| Authors: | J. Chen, A. B r , G. Nouet,P. Ruterana |
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| Affiliation: | aLaboratoire Universitaire de Recherche d’Alençon, IUT d’Alençon, 61250 Damigny, France;bLaboratoire de Physique et de Chimie de l’Environnement, Université de Ouagadougou, 03 BP: 7021 Ouagadougou 03, Burkina Faso;cSIFCOM, UMR CNRS 6176, ENSICAEN, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France |
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| Abstract: | Faceting of coincidence grain boundaries was experimentally observed in an MBE GaN layer. The energy of a few configurations including special facets as the first and the second shortest periods of the CSL unit cell was calculated with the empirical potential of Stillinger and Weber adapted to GaN. It is shown that the experimental configuration presents the lowest increase of energy by comparison to the two individual periods. |
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