Quantized field-electron emission at 300 K in self-assembled arrays of silicon nanowires |
| |
Authors: | A.I. Klimovskaya O.E. Raichev A.A. Dadykin Yu.M. Litvin P.M. Lytvyn I.V. Prokopenko T.I. Kamins S. Sharma Yu. Moklyak |
| |
Affiliation: | aInstitute of Semiconductor Physics, National Academy of Sciences, Kyiv, Ukraine;bInstitute of Physics, National Academy of Sciences, Kyiv, Ukraine;cQuantum Science Research, Hewlett-Packard Laboratories, Palo Alto, CA, USA |
| |
Abstract: | Dense ensembles of silicon nanowires were prepared by metal-catalyzed chemical vapor deposition on silicon substrates. Some of these ensembles were doped with phosphorous during growth. The nanowires were characterized using scanning electron microscopy, X-ray diffraction, and mass spectroscopy. Field emission of electrons from these structures was studied at room temperatures in ultra-high vacuum. The measurements were carried out using a parallel-plate diode cell. At high-applied fields, the current–voltage characteristics deviate from the Fowler–Nordheim law and exhibit a step-wise increase in the current with the increasing voltage at 300 K. Possible mechanisms of the observed quantized field emission are discussed. |
| |
Keywords: | Field emission Array of silicon nanowires |
本文献已被 ScienceDirect 等数据库收录! |
|